SCTL90N65G2V

Name: SCTL90N65G2V
Brand: STMicroelectronics
SKU: SCTL90N65G2V
Price: 36.52 USD
Availability: OutOfStock

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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
Learn More about SCTL90N65G2V

Quantity	$ per Unit	Savings
1 - 9	$36.52	0%
10	$33.69	8%
10 +	Contact Sales

Out of stock

$36.52

Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	PowerFLAT 8x8 HV

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features

Key features
Very fast and robust intrinsic body diode Low capacitances Source sensing pin for increased efficiency

SCTL90N65G2V

Active

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package Learn More about SCTL90N65G2V

Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
Learn More about SCTL90N65G2V