📢 Limited time offer – Buy One Get One Free on Intelligent Power Switch boards. Use code DV-IPS-BOGO-12 at checkout! Order now

Flash sale: FREE Page EEPROM products until Dec. 19th. Use code DV-EEPROM-FREE-11 at checkout! Shop Now

🎄 Celebrate early X’mas with us: $5.99 flat rate shipping on all orders! Promotion ends on Dec. 19th. Shop Now 🎄

Active

SCTW100N120G2AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More

Key features
  • AEC-Q101 qualified
  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (TJ = 200 °C)
Out of Stock
Quantity $ per unit Savings
1-500$0.000%
Contact sales
$0.00
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More

Key features
  • AEC-Q101 qualified
  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (TJ = 200 °C)