SCTW100N120G2AG

Name: SCTW100N120G2AG
Brand: STMicroelectronics
SKU: SCTW100N120G2AG
Availability: OutOfStock

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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
Learn More about SCTW100N120G2AG

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Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	HIP247

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features

Key features
AEC-Q101 qualified High speed switching performance Very fast and robust intrinsic body diode Low capacitances Very high operating junction temperature capability (T_J = 200 °C)

SCTW100N120G2AG

Active

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package Learn More about SCTW100N120G2AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
Learn More about SCTW100N120G2AG