SCTW35N65G2V

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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package

Quantity $ per Unit Savings
1 - 9$17.430%
10 - 24$16.028%
25 - 99$15.3612%
100 - 500$13.5322%
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Out of stock
$17.43
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200°C)