SCTW35N65G2V

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Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 45 A in an HiP247 package
Quantity $ per Unit Savings
1 - 9$12.450%
10 - 24$11.458%
25 - 99$10.9712%
100 - 249$9.4924%
250 - 499$9.1926%
500$8.6031%
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In stock:
$12.45
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200°C)