SCTWA35N65G2V

SCTWA35N65G2V

VL53L1CXV0FY/1

VL53L1CXV0FY/1

SCTW35N65G2V Active
Free

Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key Features
  • Very fast and robust intrinsic body diode
  • Low capacitance

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

In stock:
$12.45
or
Range Unit Price Savings
1 - 9$12.450%
10 - 24$11.458%
25 - 99$10.9712%
100 - 249$9.4924%
250 - 499$9.1926%
500$8.6031%
Contact Sales