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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | HIP247 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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Quantity | $ per unit | Savings |
---|---|---|
1-24 | $14.52 | 0% |
25-99 | $9.51 | 35% |
100-249 | $9.04 | 38% |
250-500 | $8.69 | 40% |
500 + |
Contact sales |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | HIP247 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More
|