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    SCTW35N65G2VAG

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    Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
    Learn More about SCTW35N65G2VAG

    Quantity $ per Unit Savings
    1 - 9$16.070%
    10 - 24$14.788%
    25 - 99$14.1612%
    100 - 499$12.4822%
    500$11.1331%
    500 + Contact Sales
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    In stock
    $16.07
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeAutomotive
    Package NameHIP247
    Key features
    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Low capacitance
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