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SCTW35N65G2VAG

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Low capacitance
In stock
Quantity $ per unit Savings
1-24$14.520%
25-99$9.5135%
100-249$9.0438%
250-500$8.6940%
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$14.52
$14.52
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More

Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Low capacitance