SCTW40N120G2V

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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

Quantity $ per Unit Savings
1 - 9$18.340%
10 - 24$16.868%
25 - 99$16.1612%
100 - 500$14.2422%
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In stock
$18.34
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)