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Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameHIP247
Key Features
  • AEC-Q101 qualified
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

In stock:
$16.25
or
Range Unit Price Savings
1 - 9$16.250%
10 - 24$14.948%
25 - 99$14.3212%
100 - 249$12.3924%
250 - 499$12.0026%
500$11.2231%
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