SCTW40N120G2VAG

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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package

Quantity $ per Unit Savings
1 - 9$22.410%
10 - 24$20.608%
25 - 99$19.7512%
100 - 500$17.4022%
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Out of stock
$22.41
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameHIP247
Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)