SCTW40N120G2VAG

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Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
Quantity $ per Unit Savings
1 - 9$18.110%
10 - 24$16.658%
25 - 99$15.9512%
100 - 499$14.0622%
500$12.5131%
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In stock:
$18.11
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameHIP247
Key features
  • AEC-Q101 qualified
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance