SCTW60N120G2

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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package

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1 - 500$25.860%
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$25.86
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)