SCTW70N120G2V

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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package

Quantity $ per Unit Savings
1 - 9$38.580%
10 - 24$36.017%
25 - 99$34.5011%
100 - 499$31.2619%
500$30.1622%
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Out of stock
$38.58
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances