SCTW70N120G2V

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Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
Quantity $ per Unit Savings
1 - 9$34.130%
10 - 24$31.498%
25 - 99$30.0712%
100 - 249$26.5322%
250 - 499$24.7727%
500$22.6434%
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Out of stock
$34.13
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances