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SCTWA20N120

Name: SCTWA20N120
Brand: STMicroelectronics
SKU: SCTWA20N120
Price: 17.43 USD
Availability: OutOfStock

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Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
Learn More about SCTWA20N120

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Out of stock

$17.43

Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	HIP247 long leads

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key features

Key features
Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability (T_J = 200 °C) Very fast and robust intrinsic body diode Low capacitance

SCTWA20N120

Active

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package Learn More about SCTWA20N120

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
Learn More about SCTWA20N120