NRND
Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 long leads package
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | HIP247 long leads |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $11.06 | 0% |
10-99 | $9.63 | 13% |
100-249 | $8.33 | 25% |
250-500 | $8.08 | 27% |
500 + |
Contact sales |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | HIP247 long leads |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|