SCTWA20N120 Active

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 long leads package
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247 long leads
Key Features
  • Very tight variation of on-resistance vs. temperature
  • Slight variation of switching losses vs. temperature
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

In stock:
$13.14
Range Unit Price Savings
1 - 9$13.140%
10 - 24$12.088%
25 - 99$11.5812%
100 - 249$10.0224%
250 - 499$9.7026%
500$9.0831%
Contact Sales