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SCTWA20N120
Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 long leads package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 long leads |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $12.26 | 0% |
| 10-24 | $10.80 | 12% |
| 25-49 | $10.01 | 18% |
| 50-99 | $9.93 | 19% |
| 100-249 | $9.25 | 25% |
| 250-500 | $8.72 | 29% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 long leads |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|