SCTWA30N120 Active
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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| ROHS Compliance Grade | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-247 long leads |
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This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
In stock:
$22.79
| Range | Unit Price | Savings |
|---|---|---|
| 1 - 9 | $22.79 | 0% |
| 10 - 24 | $21.01 | 8% |
| 25 - 99 | $20.07 | 12% |
| 100 - 249 | $17.71 | 22% |
| 250 - 499 | $16.52 | 27% |
| 500 | $16.28 | 29% |
| 500 + | Contact Sales | |