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SCTWA30N120
Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 long leads package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 long leads |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $24.50 | 0% |
| 10-24 | $19.36 | 21% |
| 25-49 | $17.54 | 28% |
| 50-99 | $17.53 | 28% |
| 100-249 | $16.61 | 32% |
| 250-500 | $15.96 | 35% |
| 500 + | Contact sales | |
$24.50
$24.50
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 long leads |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|