VL53L0CXV0DH/1

VL53L0CXV0DH/1

SCTW35N65G2V

SCTW35N65G2V

SCTWA35N65G2V Active

Silicon carbide Power MOSFET 650 V, 45 A, 75 mOhm (typ. TJ = 175 C) in an HiP247 long leads package
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247 long leads
Key Features
  • Very tight variation of on-resistance vs. temperature
  • Very fast and robust intrinsic body diode
  • Low capacitance

This silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.

In stock:
$10.91
Range Unit Price Savings
1 - 9$10.910%
10 - 24$10.038%
25 - 99$9.6012%
100 - 249$8.3124%
250 - 499$8.0526%
500$7.5331%
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