SCTWA35N65G2VAG

Name: SCTWA35N65G2VAG
Brand: STMicroelectronics
SKU: SCTWA35N65G2VAG
Price: 15.34 USD
Availability: OutOfStock

Active

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
Learn More about SCTWA35N65G2VAG

Quantity	$ per Unit	Savings
1 - 9	$15.34	0%
10 - 99	$14.10	8%
100 - 500	$11.92	22%
500 +	Contact Sales

Out of stock

$15.34

Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	HIP247 long leads

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features

Key features
AEC-Q101 qualified Very fast and robust intrinsic body diode Low capacitance

SCTWA35N65G2VAG

Active

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package Learn More about SCTWA35N65G2VAG

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
Learn More about SCTWA35N65G2VAG