SCTWA40N120G2AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
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Key features
AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (T_J = 200 °C) Source sensing pin for increased efficiency

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