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    Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.
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    SCTWA40N120G2AG

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    Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
    Learn More about SCTWA40N120G2AG

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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeAutomotive
    Package NameHIP247 long leads

    This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    Key features
    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Very high operating junction temperature capability (TJ = 200 °C)