🎄 Join our holiday celebration with $5.99 flat-rate shipping until December 12th! 🎄
Enter your email address to be notified when the product is available to order.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.