SCTWA50N120-4

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Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package

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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHiP247-4
Key features
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Source sensing pin for increased efficiency
  • Very high operating junction temperature capability (TJ = 200 °C)