SCTWA50N120

Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	HIP247 long leads

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Key features

Key features
Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T_J = 200 °C) Very fast and robust intrinsic body diode Low capacitance

Out of Stock

Quantity	$ per unit	Savings
1	$29.22	0%
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$29.22

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	HIP247 long leads

Description

Key features

Key features
Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T_J = 200 °C) Very fast and robust intrinsic body diode Low capacitance