SCTWA60N12G2-4AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	HiP247-4

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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Key features

Key features
AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (T_J = 200 °C) Source sensing pin for increased efficiency

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	HiP247-4

Description

Key features

Key features
AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (T_J = 200 °C) Source sensing pin for increased efficiency