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SD2933-06W

300 W, 50 V, 30 MHz, RF power DMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameM177

The SD2933-06W is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up 150 MHz. Its special low thermal resistance package, makes it ideal for ISM applications, where reliability and ruggedness are critical factors.

Key features
  • Gold metallization
  • Excellent thermal stability
  • Common source configuration
  • POUT = 300 W min. with 20 dB gain @ 30 MHz
  • Thermally enhanced packaging for lower junction temperatures
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ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameM177

The SD2933-06W is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up 150 MHz. Its special low thermal resistance package, makes it ideal for ISM applications, where reliability and ruggedness are critical factors.

Key features
  • Gold metallization
  • Excellent thermal stability
  • Common source configuration
  • POUT = 300 W min. with 20 dB gain @ 30 MHz
  • Thermally enhanced packaging for lower junction temperatures