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SD56060

60 W, 28 V, HF to 1 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameM246

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.

Key features
  • Excellent thermal stability
  • Common source configuration push-pull
  • BeO-free package
Out of Stock
Quantity $ per unit Savings
1-500$150.460%
Contact sales
$150.46
ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameM246

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.

Key features
  • Excellent thermal stability
  • Common source configuration push-pull
  • BeO-free package