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SD56060
60 W, 28 V, HF to 1 GHz RF power LDMOS transistor
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Loose Piece |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | M246 |
The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.
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| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Loose Piece |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | M246 |
The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.
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