🎅 Early holiday celebration: Get 5% discount on every order till Dec. 14th! 🎅 Shop now!
📢 Announcement: Orders placed during the US holiday season will begin processing on or after Dec. 1st. 📢
🚀 New Platform Beta is Live! Expect some delays in processing orders! Apologies for the inconveniences! 🚀 Order now!
Active
60 W, 28 V, HF to 1 GHz RF power LDMOS transistor
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Loose Piece |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | M246 |
The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.
|
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Loose Piece |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | M246 |
The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.
|