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SGT070R70HTO
700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-LL |
The SGT070R70HTO is a 700 V, 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency...
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Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $9.09 | 0% |
| 10-99 | $6.77 | 26% |
| 100-499 | $5.65 | 38% |
| 500 | $5.03 | 45% |
| 500 + | Contact sales | |
$9.09
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-LL |
The SGT070R70HTO is a 700 V, 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency...
Read More
|