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SGT080R70ILB
700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | POWERFLAT 8X8 HV FOR POWERGAN |
The SGT080R70ILB is a 700 V, 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $5.62 | 0% |
| 10-99 | $4.50 | 20% |
| 100-499 | $3.64 | 35% |
| 500 | $3.23 | 42% |
| 500 + | Contact sales | |
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | POWERFLAT 8X8 HV FOR POWERGAN |
The SGT080R70ILB is a 700 V, 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency...
Read More
|