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SGT105R70ILB

700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor

Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeIndustrial
Package NamePOWERFLAT 8X8 HV FOR POWERGAN

The SGT105R70ILB is a 700 V, 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable...
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Key features
  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Kelvin source pad for optimum gate driving
  • Zero reverse recovery charge
  • ESD safeguard
Out of Stock
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack3
GradeIndustrial
Package NamePOWERFLAT 8X8 HV FOR POWERGAN

The SGT105R70ILB is a 700 V, 21.7 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable...
Read More

Key features
  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Kelvin source pad for optimum gate driving
  • Zero reverse recovery charge
  • ESD safeguard