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SGT120R65AL

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650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

Quantity $ per Unit Savings
1 - 9$5.050%
10 - 99$4.5410%
100 - 499$3.7126%
500$3.1637%
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In stock
$5.05
Parameter NameParameter Value
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePOWERFLAT 5X6 HV FOR POWERGAN

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Key features
  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Kelvin source pad for optimum gate driving
  • Zero reverse recovery charge