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    SGT120R65AL

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    650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
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    Parameter NameParameter Value
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NamePOWERFLAT 5X6 HV FOR POWERGAN

    The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

    Key features
    • Enhancement mode normally off transistor
    • Very high switching speed
    • High power management capability
    • Extremely low capacitances
    • Kelvin source pad for optimum gate driving
    • Zero reverse recovery charge