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    SGT190R70ILB

    700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor

    Parameters
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePOWERFLAT 8X8 HV FOR POWERGAN
    Description

    The SGT190R70ILB is a 700 V, 11.5 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable...
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    Key features
    Key features
    • Enhancement mode normally off transistor
    • Very high switching speed
    • High power management capability
    • Extremely low capacitances
    • Kelvin source pad for optimum gate driving
    • Zero reverse recovery charge
    • ESD safeguard
    Out of Stock
    Quantity $ per unit Savings
    1-500$3.690%
    500 + Contact sales
    $3.69
    Parameters
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePOWERFLAT 8X8 HV FOR POWERGAN
    Description

    The SGT190R70ILB is a 700 V, 11.5 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable...
    Read More

    Key features
    Key features
    • Enhancement mode normally off transistor
    • Very high switching speed
    • High power management capability
    • Extremely low capacitances
    • Kelvin source pad for optimum gate driving
    • Zero reverse recovery charge
    • ESD safeguard