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SGT1D5R10MEA
100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | EN-FCLGA 5X6 |
The SGT1D5R10MEA is a 100 V, 501 A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultra-fast switching operation to enable high power density and unbeatable efficiency performances.
|
| Operating Temp Max Celsius | 150.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | EN-FCLGA 5X6 |
The SGT1D5R10MEA is a 100 V, 501 A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultra-fast switching operation to enable high power density and unbeatable efficiency performances.
|