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SGT1D5R10MEA

100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor

Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameEN-FCLGA 5X6

The SGT1D5R10MEA is a 100 V, 501 A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultra-fast switching operation to enable high power density and unbeatable efficiency performances.

Key features
  • Dual side cooling package
  • Enhancement mode normally off transistor
  • Extremely low capacitances
  • High power management capability
  • Very high switching speed
  • Zero reverse recovery charge
Out of Stock
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameEN-FCLGA 5X6

The SGT1D5R10MEA is a 100 V, 501 A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultra-fast switching operation to enable high power density and unbeatable efficiency performances.

Key features
  • Dual side cooling package
  • Enhancement mode normally off transistor
  • Extremely low capacitances
  • High power management capability
  • Very high switching speed
  • Zero reverse recovery charge