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SGT65R65AL

Active

650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor

Quantity $ per Unit Savings
1 - 9$8.780%
10 - 24$7.9410%
25 - 99$7.5714%
100 - 499$6.5825%
500$5.7235%
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$8.78
Parameter NameParameter Value
Operating Temp Min Celsius0.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePOWERFLAT 5X6 HV FOR POWERGAN

The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Key features
  • Enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Kelvin source pad for optimum gate driving
  • Zero reverse recovery charge