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    main product photo

    Active

    ST13007

    High voltage fast-switching NPN power transistor

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.


    They use a Cellular Emitter structure to enhance switching speeds.

    Key features
    Key features
    • FULLY CHARACTERIZED AT 125 °C
    • VERY HIGH SWITCHING SPEED
    • IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE
    • NPN TRANSISTOR
    • HIGH VOLTAGE CAPABILITY
    • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
    • LARGE RBSOA
    • LOW SPREAD OF DYNAMIC PARAMETERS
    In stock
    Quantity $ per unit Savings
    1-9$1.750%
    10-60$1.599%
    60 + Contact sales
    $1.75
    $1.75
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.


    They use a Cellular Emitter structure to enhance switching speeds.

    Key features
    Key features
    • FULLY CHARACTERIZED AT 125 °C
    • VERY HIGH SWITCHING SPEED
    • IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE
    • NPN TRANSISTOR
    • HIGH VOLTAGE CAPABILITY
    • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
    • LARGE RBSOA
    • LOW SPREAD OF DYNAMIC PARAMETERS