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ST13007D

High voltage fast-switching NPN power transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.


It uses a Cellular Emitter structure to enhance switching speeds.

Key features
  • FULLY CHARACTERIZED AT 125 °C
  • VERY HIGH SWITCHING SPEED
  • IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE
  • INTEGRATED FREE-WHEELING DIODE
  • HIGH VOLTAGE CAPABILITY
  • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
  • LARGE RBSOA
  • LOW SPREAD OF DYNAMIC PARAMETERS
In stock
Quantity $ per unit Savings
1-9$1.130%
10-99$0.9120%
100-200$0.7236%
Contact sales
$1.13
$1.13
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.


It uses a Cellular Emitter structure to enhance switching speeds.

Key features
  • FULLY CHARACTERIZED AT 125 °C
  • VERY HIGH SWITCHING SPEED
  • IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE
  • INTEGRATED FREE-WHEELING DIODE
  • HIGH VOLTAGE CAPABILITY
  • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
  • LARGE RBSOA
  • LOW SPREAD OF DYNAMIC PARAMETERS