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ST2H8N120K5AG

Automotive-grade N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in an H2PAK-2 HC package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameH2PAK-2 HC

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • AEC-Q101 qualified
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected
  • H2PAK-2 high creepage package suitable for very high voltage application
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ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameH2PAK-2 HC

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • AEC-Q101 qualified
  • Very low FoM (figure of merit)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected
  • H2PAK-2 high creepage package suitable for very high voltage application