ST50V10200

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200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor

Quantity $ per Unit Savings
1 - 500$151.780%
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Out of stock
$151.78
Parameter NameParameter Value
Operating Temp Max Celsius200.0
ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameM246

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate/source voltage range
  • In compliance with the European Directive 2002/95/EC