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    ST50V10200

    200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor

    Parameters
    Operating Temp Max Celsius200.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeLoose Piece
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameM246
    Description

    The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC
    Out of Stock
    Quantity $ per unit Savings
    1-500$148.810%
    500 + Contact sales
    $148.81
    Parameters
    Operating Temp Max Celsius200.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeLoose Piece
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameM246
    Description

    The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC