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    ST50V10200

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    200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor
    Learn More about ST50V10200

    Quantity $ per Unit Savings
    1 - 500$151.780%
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    Parameter NameParameter Value
    Operating Temp Max Celsius200.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeLoose Piece
    ROHS Compliance GradeEcopack1
    GradeIndustrial
    Package NameM246

    The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC