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ST50V10200

200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor

Operating Temp Max Celsius200.0
ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameM246

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate/source voltage range
  • In compliance with the European Directive 2002/95/EC
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$148.81
Operating Temp Max Celsius200.0
ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameM246

The ST50V10200 is a common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate/source voltage range
  • In compliance with the European Directive 2002/95/EC