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STAC1214-350

350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameSTAC780-4F

The STAC1214-350 is a 50 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for L-band radar applications.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internal input matching for ease of use
  • Large positive and negative gate/source voltage range for improved class C operation
  • In compliance with the European Directive 2002/95/EC
Out of Stock
Quantity $ per unit Savings
1-500$205.250%
Contact sales
$205.25
ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameSTAC780-4F

The STAC1214-350 is a 50 V common-source N-channel enhancement-mode lateral field-effect RF power transistor designed for L-band radar applications.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internal input matching for ease of use
  • Large positive and negative gate/source voltage range for improved class C operation
  • In compliance with the European Directive 2002/95/EC