STAC4932F1MR

Name: STAC4932F1MR
Brand: STMicroelectronics
SKU: STAC4932F1MR
Availability: OutOfStock

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350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package
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Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Loose Piece
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	STAC780-4F

Description

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.

The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage conditions.

This device contains Beryllium oxide (BeO), which is hazardous if inhaled or ingested.

Key features

Key features
Improved ruggedness V_(BR)DSS > 200 V Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz P_OUT = 450 W typ. with 24 dB gain at 123 MHz In compliance with the 2002/95/EC European directive Moisture resistant package specifically designed to operate in extreme environments Drying recommendation before soldering: 48 hrs at 125 °C Back finishing: Sn96.5/Ag3/Cu0.5 solder Base flatness < 0.2 mm Gold content < 0.1% Minimum solder thickness > 2 μm

STAC4932F1MR

Active

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package Learn More about STAC4932F1MR

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package
Learn More about STAC4932F1MR