STAC4932F1MR

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Loose Piece
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	STAC780-4F

Description

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage...
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Key features

Key features
Improved ruggedness V_(BR)DSS > 200 V Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz P_OUT = 450 W typ. with 24 dB gain at 123 MHz In compliance with the 2002/95/EC European directive Moisture resistant package specifically designed to operate in extreme environments Drying recommendation before soldering: 48 hrs at 125 °C Back finishing: Sn96.5/Ag3/Cu0.5 solder Base flatness < 0.2 mm Gold content < 0.1% Minimum solder thickness > 2 μm

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Loose Piece
RoHs compliant	Ecopack1
Grade	Industrial
Package Name	STAC780-4F

Description

Key features

Key features
Improved ruggedness V_(BR)DSS > 200 V Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz P_OUT = 450 W typ. with 24 dB gain at 123 MHz In compliance with the 2002/95/EC European directive Moisture resistant package specifically designed to operate in extreme environments Drying recommendation before soldering: 48 hrs at 125 °C Back finishing: Sn96.5/Ag3/Cu0.5 solder Base flatness < 0.2 mm Gold content < 0.1% Minimum solder thickness > 2 μm