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STAC4932F1MR

350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameSTAC780-4F

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage...
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Key features
  • Improved ruggedness V(BR)DSS > 200 V
  • Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
  • POUT = 450 W typ. with 24 dB gain at 123 MHz
  • In compliance with the 2002/95/EC European directive
  • Moisture resistant package specifically designed to operate in extreme environments
  • Drying recommendation before soldering:
    • 48 hrs at 125 °C
  • Back finishing:
    • Sn96.5/Ag3/Cu0.5 solder
    • Base flatness < 0.2 mm
    • Gold content < 0.1%
    • Minimum solder thickness > 2 μm
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ECCN USEAR99
ECCN EUNEC
Packing TypeLoose Piece
RoHs compliantEcopack1
GradeIndustrial
Package NameSTAC780-4F

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage...
Read More

Key features
  • Improved ruggedness V(BR)DSS > 200 V
  • Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
  • POUT = 450 W typ. with 24 dB gain at 123 MHz
  • In compliance with the 2002/95/EC European directive
  • Moisture resistant package specifically designed to operate in extreme environments
  • Drying recommendation before soldering:
    • 48 hrs at 125 °C
  • Back finishing:
    • Sn96.5/Ag3/Cu0.5 solder
    • Base flatness < 0.2 mm
    • Gold content < 0.1%
    • Minimum solder thickness > 2 μm