STB13007DT4

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High voltage fast-switching NPN power transistor

Quantity $ per Unit Savings
1 - 9$1.280%
10 - 24$1.179%
25 - 99$1.1114%
100$0.9029%
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Out of stock
$1.28
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.


It uses a Cellular Emitter structure to enhance switching speeds.

Key features
  • Fully characterized at 125 ˚C
  • Very high switching speed
  • In compliance with the 2002/93/EC European Directive
  • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
  • Integrated free-wheeling diode
  • High voltage capability
  • Minimum lot-to-lot spread for reliable operation
  • Large RBSOA
  • Low spread of dynamic parameters