STB18NM80

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N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package

Quantity $ per Unit Savings
1 - 9$4.830%
10 - 24$4.3510%
25 - 99$4.1215%
100 - 499$3.5726%
500$3.0437%
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Out of stock
$4.83
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameD2PAK

These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Key features
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance