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STB33N60DM6

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N-channel 600 V, 115 mOhm typ., 25 A MDmesh DM6 Power MOSFET in a D2PAK package
Learn More about STB33N60DM6

Quantity	$ per Unit	Savings
1 - 9	$5.77	0%
10 - 24	$5.19	10%
25 - 99	$4.91	15%
100 - 499	$4.26	26%
500	$3.63	37%
500 +	Contact Sales

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$5.77

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Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	D2PAK

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent improvement in R_DS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Key features

Key features
Fast-recovery body diode Lower R_DS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected

STB33N60DM6

Active

N-channel 600 V, 115 mOhm typ., 25 A MDmesh DM6 Power MOSFET in a D2PAK package Learn More about STB33N60DM6

N-channel 600 V, 115 mOhm typ., 25 A MDmesh DM6 Power MOSFET in a D2PAK package
Learn More about STB33N60DM6