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    STB33N60DM6

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    N-channel 600 V, 115 mOhm typ., 25 A MDmesh DM6 Power MOSFET in a D2PAK package
    Learn More about STB33N60DM6

    Quantity $ per Unit Savings
    1 - 9$5.770%
    10 - 24$5.1910%
    25 - 99$4.9115%
    100 - 499$4.2626%
    500$3.6337%
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameD2PAK

    This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

    Key features
    • Fast-recovery body diode
    • Lower RDS(on) per area vs previous generation
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness
    • Zener-protected