NRND

STB34NM60ND

N-channel 600 V, 97 mOhm, 29 A FDmesh II Power MOSFET in a D2PAK package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

These FDmesh II Power MOSFET with fast-recovery body diode are produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.

Key features
  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance RDS(on)
  • 100% avalanche tested
  • High dv/dt ruggedness
In stock
Quantity $ per unit Savings
1-9$11.060%
10-99$7.6731%
100-500$6.4841%
Contact sales
$11.06
$11.06
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

These FDmesh II Power MOSFET with fast-recovery body diode are produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, these devices feature low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.

Key features
  • Fast-recovery body diode
  • Low gate charge and input capacitance
  • Low on-resistance RDS(on)
  • 100% avalanche tested
  • High dv/dt ruggedness