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    STB6N80K5

    N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK
    Description

    These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected
    In stock
    Quantity $ per unit Savings
    1-9$2.270%
    10-99$2.0012%
    100$1.6129%
    100 + Contact sales
    $2.27
    $2.27
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK
    Description

    These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected