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    STD10P10F6

    P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK
    Description

    This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    Out of Stock
    Quantity $ per unit Savings
    1-9$1.050%
    10-99$0.9411%
    100$0.7331%
    100 + Contact sales
    $1.05
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK
    Description

    This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss