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    STD10P6F6

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    P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package
    Learn More about STD10P6F6

    Quantity $ per Unit Savings
    1 - 9$1.140%
    10 - 99$1.0310%
    100 - 200$0.8030%
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK

    These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

    Key features
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss