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STD110N8F6

N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
In stock
Quantity $ per unit Savings
1-9$2.592%
10-99$1.2850%
100-499$1.0758%
500$0.8965%
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$2.59
$2.54
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss