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High voltage fast-switching NPN power transistor
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.The device is designed for use in... Read More
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
