STD26P3LLH6

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P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package

Quantity $ per Unit Savings
1 - 9$1.600%
10 - 99$1.4410%
100 - 200$1.1230%
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages

Key features
  • RDS(on)* Qgindustry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate input resistance