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    STD26P3LLH6

    P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK
    Description

    This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages

    Key features
    Key features
    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • High avalanche ruggedness
    • Low gate input resistance
    In stock
    Quantity $ per unit Savings
    1-9$1.360%
    10-99$1.2310%
    100-200$0.9530%
    200 + Contact sales
    $1.36
    $1.36
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK
    Description

    This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages

    Key features
    Key features
    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • High avalanche ruggedness
    • Low gate input resistance