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STD2HNK60Z-1

Name: STD2HNK60Z-1
Brand: STMicroelectronics
SKU: STD2HNK60Z-1
Price: 1.47 USD
Availability: InStock

Active

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in an IPAK package
Learn More about STD2HNK60Z-1

Quantity	$ per Unit	Savings
1 - 9	$1.47	0%
10 - 80	$1.31	11%
80 +	Contact Sales

In stock

$1.47

Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	150.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	IPAK

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Key features

Key features
100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected

STD2HNK60Z-1

Active

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in an IPAK package Learn More about STD2HNK60Z-1

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in an IPAK package
Learn More about STD2HNK60Z-1