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STD3NK60Z-1

Active

N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in IPAK package

Quantity $ per Unit Savings
1 - 9$1.020%
10 - 99$0.9111%
100 - 499$0.7131%
500$0.5843%
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Out of stock
$1.02
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameIPAK

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

Key features
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected