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    STDRIVE601TR

    STDRIVE601TR

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    Active

    STDRIVE601

    Triple half-bridge high-voltage gate driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-28
    Description

    The STDRIVE601 is a high voltage device manufactured with BCD6s offline technology. It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs or IGBTs suitable for 3-phase applications.All device outputs can sink and source 350 mA and 200 mA respectively. Prevention from...
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    Key features
    Key features
    • High voltage rail up to 600 V
    • Driver current capability:
      • 200 mA source current @ 25 °C
      • 350 mA sink current @ 25 °C
    • dV/dt transient immunity ±50 V/ns
    • Gate driving voltage range from 9 V to 20 V
    • Overall input-output propagation delay: 85 ns
    • Matched propagation delay for all channels
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diodes
    • Comparator for fast overcurrent protection
    • Smart shutdown function
    • Interlocking and deadtime function
    • Dedicated Enable pin
    • UVLO function on low-side and high-sides
    Out of Stock
    Quantity $ per unit Savings
    1-9$7.280%
    10-24$5.5424%
    25-99$5.1629%
    100-249$4.5438%
    250-499$4.3041%
    500$3.2455%
    500 + Contact sales
    $7.28
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-28
    Description

    The STDRIVE601 is a high voltage device manufactured with BCD6s offline technology. It is a single-chip with three half-bridge gate drivers for N-channel power MOSFETs or IGBTs suitable for 3-phase applications.All device outputs can sink and source 350 mA and 200 mA respectively. Prevention from...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • Driver current capability:
      • 200 mA source current @ 25 °C
      • 350 mA sink current @ 25 °C
    • dV/dt transient immunity ±50 V/ns
    • Gate driving voltage range from 9 V to 20 V
    • Overall input-output propagation delay: 85 ns
    • Matched propagation delay for all channels
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Integrated bootstrap diodes
    • Comparator for fast overcurrent protection
    • Smart shutdown function
    • Interlocking and deadtime function
    • Dedicated Enable pin
    • UVLO function on low-side and high-sides
    Associated products