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    STDRIVEG212QTR

    STDRIVEG212QTR

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    STDRIVEG212Q

    High voltage and high-speed half-bridge gate driver for GaN power switches

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack3
    GradeIndustrial
    Package NameQFN-18L
    Description

    As a part of the STDRIVE product family, the STDRIVEG212 is a 220 V high-speed half-bridge gate driver optimized for 5 V driving enhanced-mode GaN HEMTs.The high-side driver section is designed to support a voltage rail up to 220 V and can easily be supplied by the integrated bootstrap...
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    Key features
    Key features
    • High voltage rail up to 220 V
    • dV/dt transient immunity ±200 V/ns
    • Driver with separated sink and source path for optimal driving:
      • 1.8 A and 1.2 Ω sink
      • 0.8 A and 4.0 Ω source
    • High-side and low-side linear regulators for 5 V gate driving voltage
    • Fast high-side startup time: 5 µs
    • 50 ns propagation delay, 15 ns minimum output pulse
    • High switching frequency (> 1 MHz)
    • Embedded bootstrap diode
    • Full support of GaN hard-switching operation
    • Comparator for overcurrent detection with Smart Shutdown
    • UVLO function on VCC, VHS, and VLS
    • Separated logic inputs and shutdown pin
    • Fault pin for overcurrent, overtemperature and UVLO reporting
    • Stand-by function for low consumption mode
    • Separated PGND for Kelvin source driving and current shunt compatibility
    • 3.3 V to 20 V compatible inputs with hysteresis and pull-down
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    Quantity $ per unit Savings
    1-500$0.000%
    500 + Contact sales
    $0.00
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack3
    GradeIndustrial
    Package NameQFN-18L
    Description

    As a part of the STDRIVE product family, the STDRIVEG212 is a 220 V high-speed half-bridge gate driver optimized for 5 V driving enhanced-mode GaN HEMTs.The high-side driver section is designed to support a voltage rail up to 220 V and can easily be supplied by the integrated bootstrap...
    Read More

    Key features
    Key features
    • High voltage rail up to 220 V
    • dV/dt transient immunity ±200 V/ns
    • Driver with separated sink and source path for optimal driving:
      • 1.8 A and 1.2 Ω sink
      • 0.8 A and 4.0 Ω source
    • High-side and low-side linear regulators for 5 V gate driving voltage
    • Fast high-side startup time: 5 µs
    • 50 ns propagation delay, 15 ns minimum output pulse
    • High switching frequency (> 1 MHz)
    • Embedded bootstrap diode
    • Full support of GaN hard-switching operation
    • Comparator for overcurrent detection with Smart Shutdown
    • UVLO function on VCC, VHS, and VLS
    • Separated logic inputs and shutdown pin
    • Fault pin for overcurrent, overtemperature and UVLO reporting
    • Stand-by function for low consumption mode
    • Separated PGND for Kelvin source driving and current shunt compatibility
    • 3.3 V to 20 V compatible inputs with hysteresis and pull-down
    Associated products