STDRIVEG600W

High voltage half-bridge gate driver for GaN transistors

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	150.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	N/A
Grade	Industrial
Package Name	US WF V.I.

Description

The STDRIVEG600W is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs...
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Key features

Key features
dV/dt immunity ±200 V/ns Driver current capability: 1.3/2.4 A source/sink typ @ 25 °C, 6 V 5.5/6 A source/sink typ @ 25 °C, 15 V Separated turn on and turn off gate driver pins 45 ns propagation delay with tight matching 3.3 V, 5 V TTL/CMOS inputs with hysteresis Interlocking function UVLO on low-side and high-side sections Dedicated pin for shut down functionality Over temperature protection

Out of Stock

Quantity	$ per unit	Savings
1-9	$2.59	0%
10-24	$2.15	17%
25-99	$2.14	18%
100-499	$1.71	34%
500	$1.40	46%
500 +	Contact sales

$2.59

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	150.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	N/A
Grade	Industrial
Package Name	US WF V.I.

Description

Key features

Key features
dV/dt immunity ±200 V/ns Driver current capability: 1.3/2.4 A source/sink typ @ 25 °C, 6 V 5.5/6 A source/sink typ @ 25 °C, 15 V Separated turn on and turn off gate driver pins 45 ns propagation delay with tight matching 3.3 V, 5 V TTL/CMOS inputs with hysteresis Interlocking function UVLO on low-side and high-side sections Dedicated pin for shut down functionality Over temperature protection