STDRIVEG600W

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High voltage half-bridge gate driver for GaN transistors

Quantity $ per Unit Savings
1 - 9$2.590%
10 - 24$2.3210%
25 - 99$2.2015%
100 - 249$1.8728%
250 - 499$1.7532%
500$1.5441%
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Out of stock
$2.59
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius150.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeN/A
GradeIndustrial
Package NameUS WF V.I.
Key features
  • dV/dt immunity ±200 V/ns
  • Driver current capability:
    • 1.3/2.4 A source/sink typ @ 25 °C, 6
      V
    • 5.5/6 A source/sink typ @ 25 °C, 15
      V
  • Separated turn on and turn off gate driver pins
  • 45 ns propagation delay with tight matching
  • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
  • Interlocking function
  • UVLO on low-side and high-side sections
  • Dedicated pin for shut down functionality
  • Over temperature protection