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    STDRIVEG610Q

    STDRIVEG610Q

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    STDRIVEG610QTR

    High voltage and high-speed half-bridge gate driver for GaN power switches

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameQFN-18L
    Description

    The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.High current capability, short propagation delay with excellent...
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    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt transient immunity ±200 V/ns
    • Driver with separated sink and source path for optimal driving:
      • 2.4 A and
        1.2 Ω sink
      • 1.0 A and
        3.7 Ω source
    • High-side and low-side linear regulators for 6 V gate driving voltage
    • Ultra fast high-side startup time: 300 ns
    • 45 ns propagation delay, 15 ns minimum output pulse
    • High switching frequency (> 1 MHz)
    • Embedded 600 V bootstrap diode
    • Full support of GaN hard-switching operation
    • UVLO function on VCC, VBO, and
      VLS
    • Separated logic inputs and shutdown pin
    • Fault pin for overtemperature and UVLO reporting
    • Stand-by function for low consumption mode
    • Separated PGND for Kelvin source driving and current shunt compatibility
    • 3.3 V to 20 V compatible inputs with hysteresis and pull-down
    In stock
    Quantity $ per unit Savings
    1-9$4.690%
    10-24$3.1234%
    25-50$2.7242%
    50 + Contact sales
    $4.69
    $4.69
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameQFN-18L
    Description

    The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.High current capability, short propagation delay with excellent...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt transient immunity ±200 V/ns
    • Driver with separated sink and source path for optimal driving:
      • 2.4 A and
        1.2 Ω sink
      • 1.0 A and
        3.7 Ω source
    • High-side and low-side linear regulators for 6 V gate driving voltage
    • Ultra fast high-side startup time: 300 ns
    • 45 ns propagation delay, 15 ns minimum output pulse
    • High switching frequency (> 1 MHz)
    • Embedded 600 V bootstrap diode
    • Full support of GaN hard-switching operation
    • UVLO function on VCC, VBO, and
      VLS
    • Separated logic inputs and shutdown pin
    • Fault pin for overtemperature and UVLO reporting
    • Stand-by function for low consumption mode
    • Separated PGND for Kelvin source driving and current shunt compatibility
    • 3.3 V to 20 V compatible inputs with hysteresis and pull-down
    Associated products