Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD
    STDRIVEG611QTR

    STDRIVEG611QTR

    main product photo

    Active

    New

    STDRIVEG611Q

    High voltage and high-speed half-bridge gate driver for GaN power switches

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameGQFN 4X5X0.97
    Description

    The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.High current capability, short propagation delay with excellent...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt transient immunity ±200 V/ns in full temperature range
    • Driver with separated sink and source path for optimal driving:
      • 2.4 A and
        1.2 Ω sink
      • 1.0 A and
        3.7 Ω source
    • High-side and low-side linear regulators for 6 V gate driving voltage
    • 5 µs high-side startup time and high frequency (> 1 MHz)
    • 45 ns with 10 ns matching and 15 ns minimum output pulse
    • Hard switching operation and internal bootstrap diode
    • Comparator for overcurrent detection with Smart Shutdown
    • UVLO function on VCC, VHS, and VLS
    • Shutdown, standby, overtemperature with Fault signaling pin
    • Separated PGND for Kelvin source driving and current shunt compatibility
    • 3.3 V to 20 V compatible inputs with hysteresis and pull-down
    Coming Soon
    Quantity $ per unit Savings
    1-500$0.000%
    500 + Contact sales
    $0.00
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameGQFN 4X5X0.97
    Description

    The STDRIVEG611 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.High current capability, short propagation delay with excellent...
    Read More

    Key features
    Key features
    • High voltage rail up to 600 V
    • dV/dt transient immunity ±200 V/ns in full temperature range
    • Driver with separated sink and source path for optimal driving:
      • 2.4 A and
        1.2 Ω sink
      • 1.0 A and
        3.7 Ω source
    • High-side and low-side linear regulators for 6 V gate driving voltage
    • 5 µs high-side startup time and high frequency (> 1 MHz)
    • 45 ns with 10 ns matching and 15 ns minimum output pulse
    • Hard switching operation and internal bootstrap diode
    • Comparator for overcurrent detection with Smart Shutdown
    • UVLO function on VCC, VHS, and VLS
    • Shutdown, standby, overtemperature with Fault signaling pin
    • Separated PGND for Kelvin source driving and current shunt compatibility
    • 3.3 V to 20 V compatible inputs with hysteresis and pull-down