STEVAL-G0807LBCB

The STEVAL-G0807LBCB is designed for evaluating the electrical and thermal characteristics of the SGT080R70ILB 700-V e-mode PowerGaN transistor using the isolated gate driver STGAP2GS.

The half-bridge configuration enables the emulation of buck, boost, PFC, and inverter topologies with a dedicated external controller and filtering.

The STEVAL-G0807LBCB is optimized to reduce voltage undershoots and overshoots while ensuring fast switching times.

As the PowerGaN switches are mounted on the top side of the FR4 PCB, it facilitates the evaluation of different thermal interface materials (TIM), enabling the PowerGaN to deliver maximum power with an efficient thermal interface.

The SGT080R70ILB is a 60 mΩ typ, 700 V, 29 A e-mode GaN power transistor combined with an innovative PowerFLAT 8x8 HV bottom-side cooling packaging technology. This device provides low conduction losses, high current capability, and ultrafast switching operation, enabling high-power density and efficiency performance.

The PowerGaN transistor is controlled by the STGAP2GS, a galvanically isolated 3 A single gate driver for enhancement-mode GaN FETs. The board allows independent optimization of turn-on and turn-off by using dedicated gate resistors.